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    • Assessment of Germanane Field-Effect Transistors for CMOS Technology 

      Zhao, Yiju; Almutairi, Abdulaziz; Yoon, Youngki (Institute of Electrical and Electronics Engineers, 2017-10-13)
      Using self-consistent atomistic quantum transport simulations, the device characteristics of n-type and p-type germanane (GeH) field-effect transistors (FETs) are evaluated. While both devices exhibit near-identical off-state ...
    • Resilient Corner-Based Vehicle Velocity Estimation 

      Pirani, Mohammad; Hashemi, Ehsan; Khajepour, Amir; Fidan, Baris; Kasaiezadeh Mahabadi, Seyed Alireza; Chen, Shih-Ken; Litkouhi, Baktiar (Institute of Electrical and Electronics Engineers, 2017-02-23)
      This paper presents longitudinal and lateral velocity estimators by considering the effect of the suspension compliance (SC) at each corner (tire) for ground vehicles. The estimators are developed to be resilient to sensor ...


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