Now showing items 1-2 of 2

    • Assessment of Germanane Field-Effect Transistors for CMOS Technology 

      Zhao, Yiju; Almutairi, Abdulaziz; Yoon, Youngki (Institute of Electrical and Electronics Engineers, 2017-10-13)
      Using self-consistent atomistic quantum transport simulations, the device characteristics of n-type and p-type germanane (GeH) field-effect transistors (FETs) are evaluated. While both devices exhibit near-identical off-state ...
    • PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices 

      AlMutairi, AbdulAziz; Yin, Demin; Yoon, Youngki (Institute of Electrical and Electronics Engineers, 2017-11-15)
      PtSe2, a new family of transition metal dichalcogenides, has been explored for electronic device applications using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) within the third nearest ...


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